78. Arrange the following Antennas on the basis of increasing order of directivity Short dipole HPBW – 90° λ/4 monopole Isotropic (hypothetical) Hemispherical radiator λ/2 monopole A. (b), (d), (c), (a), (e) B. (e), (b), (d), (a), (c) C. (c), (d), (a), (b), (e) D. (d), (c), (a), (e), (b) Answer: Option C Previous yr Question papers with Full Explanations →

77. During the oxidation process, which of the following statements is not correct? A. The rate constant for wet oxidation of silicon increases with decreasing temperature. B. The wet oxidation is governed by the equation Si + 2H 2 O → SiO 2 + 2H 2 C. For a growth of an oxide of thickness 'd', a layer of silicon with thickness of 0.44d is consumed. D. During the oxidation process, the Si - SiO 2 interface moves into silicon. Answer: Option C Previous yr Question papers with Full Explanations →

76. If a coil draws 0.5 A from a 120 V, 60 Hz source at a 0.7 lagging power factor, then (a) Coil resistance is 240 Ω (b) Power factor angle is cos -1 (0.7) (c) Coil impedance is 168 + j171.4 Ω (d) Power factor angle is 32.38° (e) Coil induction is 0.455 H A. (a) and (b) only B. (c) and (e) only C. (d) and (e) only  D. (a) and (e) only Answer: Option B cos(phi) = R / Z or, 0.7 = R / 240      (120/0.5=240) or, R = 168 XL = sqrt(Z^2 - R^2) = sqrt(240^2 - 168^2) = 171.5 ohm L = XL/2-pi*f = XL/2*3.14*60 = 171.5/2*3.14*60 = 0.455 H Previous yr Question papers with Full Explanations →

73. For SCR (a) I 2 t rating of the SCR represents the capability to withstand the overload current for the specified time, where the current (I) is the rms value for the time interval t. (b) The negative gate bias decreases the forward blocking capability and maximizes the false triggering possibility during high dv/dt operation. (c) Resistance at the gate increases the dv/dt capability and lowers the turn-off time. (d) The gate non trigger voltage is the maximum DC gate voltage that maybe applied between gate and anode for which the device can maintain its rated blocking voltage. (e) The turn-off time becomes shorter due to introduction of Au Atoms in silicon, which serve as 'traps' for carriers, but it increases ON state loss. A. (a) and (b) only B. (b) and (c) only C. (a) and (d) only D. (c) and (e) only ...

Instructions for Frequency Shift Keying Modulation (FSK) Step 1: Click on 'Generate Message' button to generate input message signal Step 2: Then click on 'Generate Carrier' button to generate carrier signal Step 3: You can change the carrier signal frequencies from the input fields Step 4: Click on 'Simulate FSK' button to generate Frequency Shift Keying Signal Carrier Frequency 1 in Hz: Carrier Frequency 2 in Hz: ...

Frequency Shift Keying Modulation (FSK) Carrier Frequency 1 in Hz: Carrier Frequency 2 in Hz: Sampling Frequency in Hz: Bit Rate (bps): Perform FSK Demodulation ...

71. The default offset register for code segment register (CS) in 8086 is: A. SP B. DI C. IP D. BX Answer: Option C Previous yr Question papers with Full Explanations →

68. Match the List-I with List-II. List-I (Interrupt) List-II (Address (HEX)) (a) IE0 I. 0003 (b) IE1 II. 000B (c) TF0 III. 0013 (d) TF1 IV. 001B Choose the correct answer from the options given below: (a) (b) (c) (d) A. I II III IV B. III ...