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A bar of silicon is doped with boron concentration of $10^{16}\,\text{cm}^{-3}$ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of $10^{20}\,\text{cm}^{-3}\text{s}^{-1}$. If the recombination lifetime is $100\,\mu s$, intrinsic carrier concentration of silicon is $10^{10}\,\text{cm}^{-3}$, and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is (A) $10^{20}\,\text{cm}^{-6}$ (B) $2\times10^{20}\,\text{cm}^{-6}$ (C) $10^{32}\,\text{cm}^{-6}$ (D) $2\times10^{32}\,\text{cm}^{-6}$ Step-by-Step Solution Step 1 : Identify the Type of Semiconductor The silicon is doped with boron. Boron is an acceptor impurity , therefore the semiconductor is p-type . Since boron is fully ionized, \[ p_0=N_A=10^{16}\,\text{cm}^{-3} \] This is the equilibrium hole ...