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UGC-NET Electronic Science Question Paper With Answer Key Download Pdf [June 2025] Download Question Paper 2025 | 2024 | 2023 | 2022 | 2021 | 2020 UGC-NET Electronic Science June 2025 Answers with Explanations Explanations 1. For forming a p-type semiconductor, the dopant must be a trivalent impurity (three valence electrons) so that it creates acceptor levels and holes become the majority carriers. Among the given elements, boron (B) is a group-III element (trivalent). Arsenic (As) and phosphorus (P) are group-V (pentavalent) donors that produce n-type material, and germanium (Ge) is a group-IV element usually used as the semiconductor, not as an acceptor dopant. Hence, doping an intrinsic semiconductor with B produces a p-type semiconductor. 2. The ohmic resistance of a JFET at zero gate bias is given by the standard relation: R DS(on) = V P / I DSS because ...