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Pull-Up and Pull-Down Ratio in nMOS Inverter


Pull-Up and Pull-Down Ratio in nMOS Inverter

nMOS Inverter Overview

In an nMOS inverter, the nMOS transistor acts as the pull-down device, while a load device (resistor or depletion nMOS) acts as the pull-up network.

Pull-Down Network

  • The nMOS transistor is the pull-down device
  • It pulls the output to 0 (GND) when ON

Pull-Up Network

  • The load device pulls the output to VDD when input is LOW
  • It provides a weak logic HIGH

Pull-Up Ratio (PU Ratio)

Defined as:

Pull-up ratio = βL / βN

Where:

  • βL = transconductance parameter of load device
  • βN = transconductance parameter of nMOS pull-down transistor

Meaning: Measures strength of pull-up compared to pull-down.

Pull-Down Ratio (PDR)

Defined as:

Pull-down ratio = βN / βL

Meaning: Measures strength of pull-down compared to pull-up.

Design Condition

For proper operation of nMOS inverter:

  • Pull-down must be stronger than pull-up
  • βN > βL is typically required

Simple Intuition

Device Role Strength
nMOS transistor Pull-down Strong
Load device Pull-up Weak

Summary

  • Pull-up ratio = pull-up strength / pull-down strength
  • Pull-down ratio = pull-down strength / pull-up strength
  • nMOS inverter works best when pull-down dominates
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