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For a p-n junction diode. A. The condition of zero net electron and hole currents requires that the Fermi level must be constant throughout the sample. ...


49. For a p-n junction diode.

  • A. The condition of zero net electron and hole currents requires that the Fermi level must be constant throughout the sample.
  • B. Depletion layer width at thermal equilibrium for a one-sided abrupt junction (WD) is independent of doping concentration.
  • C. 1⁄C2 versus V plot can yield doping density (N) and extrapolation to 1⁄C2 = 0 gives (ψbi - 2KT/q) for one-sided abrupt junction.
  • D. For Zener diode, if Breakdown voltage (VBD) is larger than 6 Eg/q then breakdown mechanism is band-to-band tunnelling and temperature coefficient of VBD is negative.

Choose the correct answer from the options given below:

  1. 1. A and B only
  2. 2. A and C only
  3. 3. B and C only
  4. 4. B and D only

Answer: (2)

A. True: Equilibrium requires a flat Fermi level.
B. False: Depletion width WD depends on doping (WD ∝ √(1/N)).
C. True: 1/C² vs V plot yields doping density and built-in potential.
D. False: Avalanche breakdown (> 6V) has a positive temperature coefficient.

Correct statements: A and C only.

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