- UGC NET Electronic Science December 2021 Question Paper with Answer Key and Detailed Solutions
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1. (D)
2. A
3.C
4.A
5.B
Logical Breakdown of Silicon Oxidation
To understand the formula, we look at the Deal-Grove Model. This model describes how an oxide layer (SiO2) grows on a silicon wafer over time.
Step 1: Understanding the Variables
- t (Time): The actual duration the silicon stays in the oxidation furnace.
- τ (Tau): This accounts for the Initial Oxide Layer. Wafers usually have a tiny bit of oxide (native oxide) before we start. τ represents the "equivalent time" it would have taken to grow that pre-existing layer.
- B/A (Linear Rate Constant): This constant tells us how fast the silicon is reacting when the oxide is very thin.
Step 2: The General Equation
The full Deal-Grove equation for oxide thickness (xo) is:
(hG is the gas phase mass transfer coefficient)
Fundamental Logic of Question 7
This question is about Mass Transport. It asks how fast oxygen gas moves from the furnace atmosphere to the surface of the silicon.
Step 1: Identify the "Push" (Driving Force)
Nature moves substances from high concentration to low concentration. The oxidant starts at CG (high) and moves toward CS (low). The "pushing force" is the difference: (CG - CS).
Step 2: Identify the "Ease of Movement"
The variable hG is the mass transfer coefficient. Think of it like "Conductivity." It tells us how easily the gas molecules can slip through the air to reach the surface.
Step 3: Combine into the Flux Law
In all transport physics, Flux = (Coefficient) × (Driving Force).