A bar of silicon is doped with boron concentration of $10^{16}\,\text{cm}^{-3}$ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of $10^{20}\,\text{cm}^{-3}\text{s}^{-1}$. If the recombination lifetime is $100\,\mu s$, intrinsic carrier concentration of silicon is $10^{10}\,\text{cm}^{-3}$, and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is
- (A) $10^{20}\,\text{cm}^{-6}$
- (B) $2\times10^{20}\,\text{cm}^{-6}$
- (C) $10^{32}\,\text{cm}^{-6}$
- (D) $2\times10^{32}\,\text{cm}^{-6}$
Step-by-Step Solution
Step 1 : Identify the Type of Semiconductor
The silicon is doped with boron. Boron is an acceptor impurity, therefore the semiconductor is p-type.
Since boron is fully ionized,
This is the equilibrium hole concentration.
Step 2 : Find the Minority Electron Concentration
Use the mass-action law:
Substitute the given values:
Step 3 : Calculate the Excess Carrier Concentration
Under steady-state illumination,
Given
Therefore,
Hence,
Step 4 : Calculate the Total Electron Concentration
The total electron concentration is
Since
we can neglect $10^4$.
Step 5 : Calculate the Total Hole Concentration
The total hole concentration is
Step 6 : Calculate the Product \(np\)
Fundamental Concepts Used
| Concept | Formula |
|---|---|
| Majority carriers (p-type) | $p_0=N_A$ |
| Majority carriers (n-type) | $n_0=N_D$ |
| Mass-action law | $n_0p_0=n_i^2$ |
| Excess carriers under illumination | $\Delta n=\Delta p=G\tau$ |
| Total electrons | $n=n_0+\Delta n$ |
| Total holes | $p=p_0+\Delta p$ |