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GATE - EC 2021 Answers with Explanations
Q.1
Current population 11,02,500
increasing 5% per annum
Let assume 2 years age, the population were, x
then, x*(1+5/100)^2 = 11,02,500
Or, x = 1000000
Option C
Q.2
p/q + q/p = 3
Or, (p/q)^2 + (q/p)^2 = (p/q + q/p)^2 - 2
Or, (p/q)^2 + (q/p)^2 = 9-2=7
Option B
Q.3
Option C
Q.4
Option C
Q.5
Option B
Q.6
Option C
Q.7
Option D
Q.8
Option A
Q.9
Option C
Q.10
Option D
Electronics and Communication (EC)
Q.1
Option A
Q.2
Solution
Q.3
Option B
Q.4
Option B
Q.5
Let the linear convolution of two discrete-time finite-length sequences $x[n]$ and $h[n]$, each of length 16, be denoted by $y[n]$. Let $z[n]$ denote the 16-point inverse discrete Fourier transform (IDFT) of the product of the 16-point discrete Fourier transforms (DFTs) of $x[n]$ and $h[n]$.
The value of $k$ for which $z[k]=y[k]$ is
- (A) 0
- (B) 1
- (C) 15
- (D) 16
Solution
Step 1: Length of Linear Convolution
Both sequences have length 16.
Length of linear convolution:
Hence the linear convolution contains the samples
Notice that there is no sample $y[31]$.
Step 2: What does the IDFT of the Product of DFTs Give?
A standard DFT property states:
Therefore,
So,
- $y[n]$ = Linear Convolution
- $z[n]$ = 16-point Circular Convolution
Step 3: Folding (Wrap-Around)
Since circular convolution has only 16 output samples, the extra samples of the 31-point linear convolution wrap around.
| Linear Convolution Sample | Wraps To |
|---|---|
| $y[0]$ | $z[0]$ |
| $y[1]$ | $z[1]$ |
| $\vdots$ | $\vdots$ |
| $y[15]$ | $z[15]$ |
| $y[16]$ | $z[0]$ |
| $y[17]$ | $z[1]$ |
| $\vdots$ | $\vdots$ |
| $y[30]$ | $z[14]$ |
Step 4: Write the Circular Convolution Samples
Step 5: Compare $z[k]$ and $y[k]$
| k | Relation | Equal? |
|---|---|---|
| 0 | $z[0]=y[0]+y[16]$ | ❌ |
| 1 | $z[1]=y[1]+y[17]$ | ❌ |
| $\vdots$ | $\vdots$ | |
| 14 | $z[14]=y[14]+y[30]$ | ❌ |
| 15 | $z[15]=y[15]$ | ✅ |
Final Answer
$\boxed{k=15}$
Therefore, the correct option is (C) 15.
Q.6
A bar of silicon is doped with boron concentration of $10^{16}\,\text{cm}^{-3}$ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of $10^{20}\,\text{cm}^{-3}\text{s}^{-1}$. If the recombination lifetime is $100\,\mu s$, intrinsic carrier concentration of silicon is $10^{10}\,\text{cm}^{-3}$, and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is
- (A) $10^{20}\,\text{cm}^{-6}$
- (B) $2\times10^{20}\,\text{cm}^{-6}$
- (C) $10^{32}\,\text{cm}^{-6}$
- (D) $2\times10^{32}\,\text{cm}^{-6}$
Step-by-Step Solution
Step 1 : Identify the Type of Semiconductor
The silicon is doped with boron. Boron is an acceptor impurity, therefore the semiconductor is p-type.
Since boron is fully ionized,
This is the equilibrium hole concentration.
Step 2 : Find the Minority Electron Concentration
Use the mass-action law:
Substitute the given values:
Step 3 : Calculate the Excess Carrier Concentration
Under steady-state illumination,
Given
Therefore,
Hence,
Step 4 : Calculate the Total Electron Concentration
The total electron concentration is
Since
we can neglect $10^4$.
Step 5 : Calculate the Total Hole Concentration
The total hole concentration is
Step 6 : Calculate the Product \(np\)
Q.7
A non-uniformly doped p-type semiconductor has length L. The energy band diagram is shown below.
Given:
- Energy difference = Δ
- Length = L
Find:
Electric field inside the semiconductor.
Solution
The semiconductor is at equilibrium, so the Fermi level remains constant throughout the material. \[ E_F=\text{constant} \] A non-uniform acceptor concentration causes the valence band to slope, producing an internal electric field.
For a uniform electric field, \[ E=V/L \] \[ \Delta V=EL \] where
- \(E\) = electric field
- \(L\) = semiconductor length
The band diagram shows an energy difference (eV) \[ \Delta \] Energy and voltage are related by \[ \Delta=q\Delta V \] Substitute \[ \Delta V=EL \] to obtain \[ \Delta=qEL \]
Rearrange to obtain the electric field: \[ \boxed{E=\frac{\Delta}{qL}} \]
Q.8
The given circuit contains two NMOS transistors \(M_1\) and \(M_2\). Find the voltage gain:
\[ A_v=\frac{v_{out}}{v_{in}} \]Solution
Step 1: Identify the amplifier
The input signal is applied to the gate of \(M_2\). Therefore \(M_2\) is the amplifying transistor.
A MOS transistor converts voltage into current:
\[ i_d=g_m v_{gs} \] For \(M_2\): \[ i_2=g_{m2}v_{in} \]Step 2: Output resistance of the circuit
For small signal analysis, the power supply \(V_{DD}\) becomes AC ground.
|
\(r_{o2}\)
|
Vout
|
\(r_{o1}\)
|
Ground
Both \(r_{o1}\) and \(r_{o2}\) are connected between the same two nodes. Therefore they are parallel.
\[ R_{out}=r_{o1}\parallel r_{o2} \]Step 3: Why \(g_{m1}\) is not present
For \(M_1\):
\[ v_{gs1}=0 \] Therefore the transconductance current is: \[ i_{gm1}=g_{m1}v_{gs1} \] \[ i_{gm1}=g_{m1}(0)=0 \]So \(M_1\) does not contribute a \(g_m\) current. It only contributes its output resistance \(r_{o1}\).
Step 4: Calculate output voltage
The current generated by \(M_2\) is:
\[ i_o=g_{m2}v_{in} \] The output voltage is: \[ v_{out}=-i_oR_{out} \] Substitute: \[ v_{out} = -(g_{m2}v_{in}) (r_{o1}\parallel r_{o2}) \]Step 5: Voltage gain
Divide by \(v_{in}\): \[ \frac{v_{out}}{v_{in}} = -g_{m2}(r_{o1}\parallel r_{o2}) \]Important Concepts
- The transistor receiving the input contributes \(g_m\).
- The transistors connected at the output contribute \(r_o\).
- Parallel resistances appear because both resistors connect from output to AC ground.
\[ \boxed{ A_v= -g_{m2}(r_{o1}\parallel r_{o2}) } \]
Q.9
For the circuit shown below, the OPAMP is ideal and \(V_{REF}\) is fixed. Find the value of:
\[ \frac{R_F}{R_{IN}} \]Given:
- \(V_{OUT}=1V\) when \(V_{IN}=0.1V\)
- \(V_{OUT}=6V\) when \(V_{IN}=1V\)
Solution
Ideal OPAMP Rules
For an ideal op-amp:1. Input current is zero: \[ i_+=i_-=0 \] 2. With negative feedback: \[ V_+=V_- \] Since \(V_{REF}\) is fixed, the positive input voltage is constant.
Step 1: Write the output equation
The circuit is an inverting amplifier with a reference voltage. The output equation is: \[ V_{OUT} = V_+ - \frac{R_F}{R_{IN}} (V_{IN}-V_+) \] Let: \[ K=\frac{R_F}{R_{IN}} \] Therefore: \[ V_{OUT}=V_+-K(V_{IN}-V_+) \]Step 2: Apply first condition
Given: \[ V_{IN}=0.1V \] \[ V_{OUT}=1V \] Therefore: \[ 1=V_+-K(0.1-V_+) \]Step 3: Apply second condition
Given: \[ V_{IN}=1V \] \[ V_{OUT}=6V \] Therefore: \[ 6=V_+-K(1-V_+) \]Step 4: Subtract the two equations
Subtract equation 1 from equation 2: \[ 6-1 = -K(1-V_+) + K(0.1-V_+) \] \[ 5 = K(0.1-1) \] \[ 5=-0.9K \] The magnitude of the gain is: \[ K=\frac{5}{0.9} \] \[ K=5.56 \]Step 5: Find resistor ratio
Since: \[ K=\frac{R_F}{R_{IN}} \] Therefore: \[ \boxed{ \frac{R_F}{R_{IN}}=5.56 } \]Important Understanding
\(V_{REF}\) only shifts the DC output level. It does not change the slope:
\[ \frac{\Delta V_{OUT}}{\Delta V_{IN}} \]The resistor ratio is determined by the change in input and output voltage.
\[ \frac{R_F}{R_{IN}} = \frac{\Delta V_{OUT}} {\Delta V_{IN}} \]\[ \boxed{ \frac{R_F}{R_{IN}}=5.56 } \]
Q.10
Consider the circuit with an ideal OPAMP shown in the figure.
Assuming |VIN| << |VCC| and |VREF| << |VCC|, determine the condition at which VOUT = 0.
Options:
- VIN = VREF
- VIN = 0.5 VREF
- VIN = 2 VREF
- VIN = 2 + VREF
Solution
Step 1: Identify the Op-Amp Configuration
The non-inverting terminal (+) is connected to ground. Therefore,
Since the op-amp is ideal and operates with negative feedback, the inverting terminal is also at virtual ground.
Step 2: Apply KCL at the Inverting Node
Three currents meet at the inverting input:
- Current from VIN
- Current from VREF
- Feedback current through RF
Current due to VIN
Current due to VREF
Observe the polarity of the VREF source. Its positive terminal is connected to ground. Hence the resistor is connected to a voltage of -VREF.
Feedback current
Step 3: Apply Kirchhoff's Current Law
Step 4: Condition for Zero Output
ForQ.11
(1235)x = (3033)yQ.12
Number of memory locations =
Therefore, the address bus needs 15 address lines.
A single decoder must be a decoder.
Each output of the decoder is generated using an AND gate with 15 inputs.
Option C - 2^15
Q.13
the feedback is negative:
Hence,
At the output summing junction, the two signals are added:
Therefore,
Q.14
For Open Loop
N = P - Z
Or, 2 = P - 1 (because open loop zero = closed loop pole)
Or, P = 3
Now for Closed Loop,
N = P-Z
or, 0 = 3-Z
or, Z = 3
Answer (d) 3
Q.15
(2η0 - η0) / (2η0 + η0) = 1/3
Answer (a) 1/3
Q.16
If det(A) = 0, the vectors are linearly dependent.
Given,
1 -1 2
7 3 x
2 3 1
= 0
Or, 40 - 5x = 0
Or, x = 8.0
Answer 8.0
Q.17
A vector field is called rotational if
Given, F = ax(4y -c1z) + ay(4x+2z)+az(2y+z)
4y -c1z 4x+2z 2y+z
Or, i(2-2) - j(0+c1) + k(4-4)
Or, c1 = 0
Answer 0
Q.18
Here the branch 2 Ω || 2 Ω = 1 Ω.
Also, 6 Ω || 3 Ω = 2 Ω, so in series with 7 Ω: 2 Ω + 7 Ω = 9 Ω.
Therefore, using the current division rule:
I = 5 × 1 / (1 + 9) = 0.5 A
Hence, the current in the 7 Ω branch is 0.5 A.
Q.19
Q.20
levels = 2^8 = 256
7.68 / (2^8 - 1) × 150 = 4.517 Volt
Q.21
Average Power = Rx(0) = 2
Q.22
The power saved = Pc + Pc.(m^2/4)
where, m = modulation index
So, percentage of power saved
= {Pc + Pc.(m^2/4)} / {Pc + Pc.(m^2/2)}
= 94.4%
Q.23
Data Rate, NFs = 8*1.25* 2 * 4 KHz = 80 KHz
R <= C
R <= Blog2(1+SNR)
Or, B >= R/log2(1+SNR)
Or, B >= (80 * 10^3) /log2(1+400)
Or, B>= 9.259 KHz
Answer 9.26
Q.24
∇. Fs >= d/dt(m(t))
∇*32*10^3 >= 4*(2*pi*4*10^3*t)
∇>= 3.14
Q.25
Critical angle = arcsin(η2/η1) = arcsin(1.48/1.50) = 80.63
Angle along axis, θ = 90-80.63 = 9.36 degree
Q.26
Question 26
Q.27
For your first pick
it is H
First H → remove that coin → depending on whether it was HT or HH, the remaining coins are different
Possibility 1: If you picked HT
Remove it → remaining coins are: HH, TT
Probability of H = 1/2
Possibility 2: If you picked HH
Remove it → remaining coins are: HT, TT
Probability of H = 1/3
Now, because you already got H on the first pick, HH was twice as likely as HT:
HT chance = 1/3
HH chance = 2/3
Therefore:
Q.28
Current at t(0-) = 20/(5+5+10) = 1 mA
Voltage across capacitor,
v(t) = 10 kilo-ohm * 1 mA = 10 V
at t = 0
ic(t=0+) = - (2 + 1) mA = - 3mA
ic = C*d(vc(t)) / dt
Or, d(vc(t)) / dt = -3 mA / 1mF = -3 V / sec
Q.29
Node A
-I1 -3V2 + (V1 - V2)/1 + V2 = 0
Or, I1 = 2V1 - 4V3
So, y11 = 2, y12 = -4
Node B
-I2+V2/1+(V2-V1) = 0
Or, I2 = -V1 + 2V2
So, y21 = -1, y22 = 2
Answer c
Q.30
Answer (a)
Q.31
For T= 0,
Q.32
Answer (a). See the solution
Q.33
Answer (d). See the solution




